Structural and ac electrical properties of a newly synthesized single phase rare earth double perovskite oxide: Ba2CeNbO6

A single phase rare earth double perovskite oxide Ba₂CeNbO₆ (BCN) is synthesized by solid-state reaction technique for the first time. The X-ray diffraction pattern of the sample at room temperature shows monoclinic structure, with the lattice parameters, a=5.9763 Å, b=5.975 Å and c=8.48 Å and β=90.04°. Impedance spectroscopy is used to study the ac electrical behavior of this material as a function of frequency (10²-10⁶ Hz) at various temperatures (30-450 °C). A relaxation is observed in the entire temperature range. Conduction mechanism is investigated by fitting the complex impedance data to Cole-Cole equation. Complex impedance plane plots show only one semicircular arc, indicating only the grain contribution of dielectric relaxation. The scaling behavior of imaginary part of electric modulus (M″) and imaginary part of electrical impedance (Z″) suggests that the relaxation describes the same mechanism at various temperatures. The frequency dependence of conductivity is interpreted in terms of the jump relaxation model and is fitted to Jonscher's power law. The values of dc conductivities extracted from the Jonscher power law varies from 2.79×10⁻⁷ to 3.5×10⁻⁵ Sm⁻¹ with the increase in temperature from 100 to 450 °C. The activation energies (0.37 eV) extracted from M″(ω) and Z″(ω) peaks are found to follow the Arrhenius law.     

基于同步辐射加速器的康普顿背散射γ光源性质及其应用研究

本文介绍了利用康普顿背散射 (BCS)产生γ射线的原理 ,并以SSRF储存环电子运行参数为例 ,给出了利用BCS方法产生MeV量级γ射线束的计算结果 ,预期该光子束具有高强度、高极化度、单色性、方向性好等优点。同时对国际上已运行和拟建的高能和低能γ束线站的装置和性能作了简要介绍 ,并分别探讨了高能和低能准单色极化γ射线在核物理和核天体物理研究中广泛的应用前景。文中对基于正对以及离轴几何条件下 ,采用直线加速器加速的电子同短脉冲强激光发生Compton/Thomson散射的激光同步辐射源作了初步探讨 ,这一方法为我们构建超短脉冲的高亮度、准单色、可调谐的X γ射线源开辟了一条新途径。     

长周期光纤光栅的功率特性

用Matlab编程的方法对长周期光栅功率特性进行了研究,数值模拟了长周期光栅入射角度、光栅长度与功率分布的图像关系.研究结论为长周期光纤光栅的设计提供理论依据.     

高功率准分子激光主振荡功率放大系统光学元件的稳定性

为了分析高功率准分子激光主振荡功率放大(MOPA)系统中各光学元件稳定性对靶面光斑定位精度的影响,建立了分析模型,利用分析结果指导高稳定性镜架设计以满足系统实验需求。根据高功率准分子激光MOPA系统特点,有效地简化了系统光路,建立了系统光路模型;按照系统打靶精度要求,利用三维坐标变换和光线追迹法,计算得到了系统单个光学元件稳定性对靶面光斑定位精度的影响规律;最后,对自行设计的镜架进行了稳定性测量。计算结果表明,反射镜的旋转变化和透镜垂直光轴的平移变化是影响靶面光斑定位精度的主要因素,且主放大光路中反射镜在X方向和Y方向上最大的变化范围分别不能超过0.8和1.6μrad。实际测量结果表明,设计的镜架在X方向和Y方向最大的变化范围分别为0.6和0.81μrad,满足系统实验要求。     

Simple power supply for power load controlled isoelectric focusing

The power supply for IEF based on features of the Cockcroft‐Walton voltage multiplier (CW VM) is described in this work. The article describes a design of the IEF power supply, its electric characteristics, and testing by IEF analysis. A circuit diagram of the power supply included two opposite charged branches (each consisting of four voltage doublers). The designed CW VM was powered by 230 V/50 Hz alternate current and it generated up to 5 kV and 90 mW at the output. Voltage and current characteristics of the power supply were measured by known load resistances in the range from 10 kΩ to 1 GΩ, which is a common resistance range for IEF strip geometry. Further, the power supply was tested by a separation of a model mixture of colored pI markers using a 175 × 3 × 0.5 mm focusing bed. Automatically limited power load enabled analysis of samples without previous optimization of the focusing voltage or electric current time courses according to sample composition. Moreover, the developed power supply did not produce any intrinsic heat and was easy to set up with cheap and commonly available parts.     

用CdSe/ZnS量子点提高体异质结有机太阳电池的效率

通过掺杂吸收光谱在可见光波段的量子点可提高聚合物对可见光的吸收,因此掺杂CdSe/ZnS核-壳结构量子点(CQDs)能提高聚(3-己基噻吩):[6,6]-苯基-C61-丁酸甲酯(P3HT:PCBM)体异质结太阳电池的能量转换效率.本文研究了CdSe/ZnS量子点在P3HT:PCBM中的不同掺杂比例及其表面配体对太阳电池光伏性能的影响,优化器件ITO(氧化铟锡)/PEDOT:PSS(聚(3,4-乙撑二氧噻吩:聚苯乙烯磺酸)/P3HT:PCBM:(CdSe/ZnS)/Al的能量转换效率达到了3.99%,与相同条件下没有掺杂量子点的参考器件ITO/PEDOT:PSS/P3HT:PCBM/Al相比,其能量转换效率提高了45.1%.     

线型和非线型分子转动光谱强度的统计模型

In this study, we found regular behavior, from a statistical point of view, in the intensities of rotational spectra for several organic and inorganic molecules at room temperature. Non-linear molecules, for which a common intensity behavior was derived, were especially interesting. We provided theoretical support for the obtained results based on the Boltzmann distribution. Boltzmann power laws were used to reproduce the statistical behavior of the intensities from the spectra of linear and non-linear molecules. We only used statistical arguments and no specific details of any molecule were used. Therefore, these results are applicable to a large class of atoms and molecules and the model is valid when considering similar conditions to those used in this study.     

宝泉抽水蓄能电站岩体抗剪参数的选取

本文讨论了岩体抗剪参数C、f值的选取方法, 推导了C、f值的数字特征公式。通过对宝泉抽水蓄能电站工程岩体抗剪参数的选取, 结果表明：由于岩体抗剪参数具有随机性和模糊性, 采用随机-模糊法选取的C、f值要符合实际；文中给出的数字特征公式可对C、f值的波动性及相关性进行检验。     

行波光电二极管级联阵列输出功率合成研究

针对未来光载无线通信所需的高功率、大带宽的光电探测器,提出了一种行波光电二极管级联阵列功率合成电路.先将行波光电二极管级联,再按照阵列式结构将多组级联的光电二极管组合起来,实现射频功率合成,以获得高功率、大带宽的射频信号.采用EDA工具,对该光电转换射频功率合成电路进行仿真模拟.仿真结果表明,该功率合成电路可以有效地将各光电二极管的射频输出信号进行功率合成,功率合成后的信号带宽显著增加,仿真结果与理论分析完全一致.此外,电路分析表明,增加该功率合成电路中的高阻微带线的特性阻抗可以有效提高其输出射频信号的带宽.     

Investigation of laterally single-diffused metal oxide semiconductor (LSMOS) field effect transistor

We propose a distinct approach to implement a laterally single diffused metal-oxide-semiconductor (LSMOS) FET with only one impurity doped p-n junction. In the LSMOS, a single p-n junction is first created using lateral dopant diffusion. The channel is formed in the p region of the p-n junction and the n region acts as the drift region. Two distinct metals of different work function are used to form the “n⁺” source/drain regions and “p⁺” body contact using the charge plasma concept. We demonstrate that the LSMOS is similar in performance to a laterally double diffused metal-oxide-semiconductor (LDMOS) although it has only one impurity doped p-n junction. The LSMOS exhibits a breakdown voltage of ∼50.0 V, an average ON-resistance of 48.7 mΩ-mm² and a peak transconductance of 53.6 μS/μm similar to that of a comparable LDMOS.